TSM4925DCS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TSM4925DCS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 319 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOP-8

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TSM4925DCS Datasheet (PDF)

..1. Size:503K taiwansemi
tsm4925dcs.pdf

TSM4925D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 25 @ VGS = -10V -7.1 4. Gate 2 5. Drain 2 -30 41 @ VGS = -4.5V -5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

9.1. Size:253K taiwansemi
tsm4944dcs.pdf

Preliminary TSM4944D 30V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 13.2 @ VGS = 10V 12.2 30 4. Gate 2 5. Drain 2 18 @ VGS = 4.5V 9.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

9.2. Size:230K taiwansemi
tsm4946dcs.pdf

TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 @ VGS = 10V 4.5 60 4. Gate 2 5. Drain 2 75 @ VGS = 4.5V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

9.3. Size:338K taiwansemi
tsm4936dcs.pdf

TSM4936D 30V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 36 @ VGS = 10V 5.9 30 4. Gate 2 5. Drain 2 53 @ VGS = 4.5V 4.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

9.4. Size:225K taiwansemi
tsm4953dcs.pdf

TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 60 @ VGS = 10V -4.9 4. Gate 2 5. Drain 2 -30 90 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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