All MOSFET. TSM4925DCS Datasheet

 

TSM4925DCS MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM4925DCS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 319 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8

 TSM4925DCS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM4925DCS Datasheet (PDF)

 ..1. Size:503K  taiwansemi
 tsm4925dcs.pdf

TSM4925DCS TSM4925DCS

TSM4925D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 25 @ VGS = -10V -7.1 4. Gate 2 5. Drain 2 -30 41 @ VGS = -4.5V -5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

 9.1. Size:253K  taiwansemi
 tsm4944dcs.pdf

TSM4925DCS TSM4925DCS

Preliminary TSM4944D 30V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 13.2 @ VGS = 10V 12.2 30 4. Gate 2 5. Drain 2 18 @ VGS = 4.5V 9.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

 9.2. Size:230K  taiwansemi
 tsm4946dcs.pdf

TSM4925DCS TSM4925DCS

TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 @ VGS = 10V 4.5 60 4. Gate 2 5. Drain 2 75 @ VGS = 4.5V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

 9.3. Size:338K  taiwansemi
 tsm4936dcs.pdf

TSM4925DCS TSM4925DCS

TSM4936D 30V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 36 @ VGS = 10V 5.9 30 4. Gate 2 5. Drain 2 53 @ VGS = 4.5V 4.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 9.4. Size:225K  taiwansemi
 tsm4953dcs.pdf

TSM4925DCS TSM4925DCS

TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 60 @ VGS = 10V -4.9 4. Gate 2 5. Drain 2 -30 90 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQPF2NA90 | IRFH8334PBF-1 | FDC3601N | CS3N65F | IRFR9014 | IRFH7446PBF | FDB7030L

 

 
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