TSM4NB60CZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSM4NB60CZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 53.2 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de TSM4NB60CZ MOSFET
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TSM4NB60CZ datasheet
tsm4nb60ch tsm4nb60ci tsm4nb60cp tsm4nb60cz.pdf
TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 2.5 @ VGS =10V 4 General Description The TSM4NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi
tsm4nd50cp.pdf
TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res
tsm4n80ci tsm4n80cz.pdf
TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s
tsm4n90ci tsm4n90cz.pdf
TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s
Otros transistores... TSM4N60CZ , TSM4N80CI , TSM4N80CZ , TSM4N90CI , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI , TSM4NB60CP , IRF9640 , TSM4ND50CP , TSM55N03CP , TSM5NB50CZ , TSM5ND50CH , TSM5ND50CP , TSM60N03CP , TSM60N06CP , TSM6866DCA .
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