Справочник MOSFET. TSM4NB60CZ

 

TSM4NB60CZ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TSM4NB60CZ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 53.2 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для TSM4NB60CZ

   - подбор ⓘ MOSFET транзистора по параметрам

 

TSM4NB60CZ Datasheet (PDF)

 ..1. Size:490K  taiwansemi
 tsm4nb60ch tsm4nb60ci tsm4nb60cp tsm4nb60cz.pdf pdf_icon

TSM4NB60CZ

TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 2.5 @ VGS =10V 4 General Description The TSM4NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi

 9.1. Size:373K  taiwansemi
 tsm4nd50cp.pdf pdf_icon

TSM4NB60CZ

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res

 9.2. Size:166K  taiwansemi
 tsm4n80ci tsm4n80cz.pdf pdf_icon

TSM4NB60CZ

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.3. Size:395K  taiwansemi
 tsm4n90ci tsm4n90cz.pdf pdf_icon

TSM4NB60CZ

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TSM4N60CZ , TSM4N80CI , TSM4N80CZ , TSM4N90CI , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI , TSM4NB60CP , AON7403 , TSM4ND50CP , TSM55N03CP , TSM5NB50CZ , TSM5ND50CH , TSM5ND50CP , TSM60N03CP , TSM60N06CP , TSM6866DCA .

History: STF32NM50N | OSG60R092HT3ZF | IXFV26N50P | AP3310GH-HF | 2SK3365 | RQ6E050AT | APT40M70B2VFRG

 

 
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