TSM7N60CZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TSM7N60CZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220

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TSM7N60CZ Datasheet (PDF)

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tsm7n60ci tsm7n60cz.pdf

TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su

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tsm7n65cz.pdf

TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe

8.2. Size:395K taiwansemi
tsm7n65ci.pdf

TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 650 1.2 @ VGS =10V 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

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tsm7n90ci tsm7n90cz.pdf

TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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