TSM7N60CZ PDF and Equivalents Search

 

TSM7N60CZ Specs and Replacement

Type Designator: TSM7N60CZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

TSM7N60CZ substitution

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TSM7N60CZ datasheet

 ..1. Size:417K  taiwansemi
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TSM7N60CZ

TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su... See More ⇒

 8.1. Size:350K  taiwansemi
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TSM7N60CZ

TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe... See More ⇒

 8.2. Size:395K  taiwansemi
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TSM7N60CZ

TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 650 1.2 @ VGS =10V 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide ... See More ⇒

 9.1. Size:400K  taiwansemi
tsm7n90ci tsm7n90cz.pdf pdf_icon

TSM7N60CZ

TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi... See More ⇒

Detailed specifications: TSM6N50CI, TSM6N50CP, TSM70N10CP, TSM7401CS, TSM75N03CP, TSM75N75CZ, TSM7900DCQ, TSM7N60CI, IRF1404, TSM7N65CI, TSM7N65CZ, TSM7N90CI, TSM7N90CZ, TSM802CQ, TSM80N08CZ, TSM85N10CZ, TSM8N50CH

Keywords - TSM7N60CZ MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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