TSM7N90CI Todos los transistores

 

TSM7N90CI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM7N90CI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 133 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
   Paquete / Cubierta: ITO-220
 

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TSM7N90CI Datasheet (PDF)

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TSM7N90CI

TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi

 9.1. Size:350K  taiwansemi
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TSM7N90CI

TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe

 9.2. Size:395K  taiwansemi
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TSM7N90CI

TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 650 1.2 @ VGS =10V 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

 9.3. Size:417K  taiwansemi
 tsm7n60ci tsm7n60cz.pdf pdf_icon

TSM7N90CI

TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su

MOSTRAR MÁS

Otros transistores... TSM7401CS , TSM75N03CP , TSM75N75CZ , TSM7900DCQ , TSM7N60CI , TSM7N60CZ , TSM7N65CI , TSM7N65CZ , IRF630 , TSM7N90CZ , TSM802CQ , TSM80N08CZ , TSM85N10CZ , TSM8N50CH , TSM8N50CP , TSM8N70CI , TSM8N80CI .

History: AOD661 | NVMFD5852NL | HAT2093R

 

 
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