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TSM7N90CI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TSM7N90CI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 49 nC
   trⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 133 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm
   Тип корпуса: ITO-220

 Аналог (замена) для TSM7N90CI

 

 

TSM7N90CI Datasheet (PDF)

 ..1. Size:400K  taiwansemi
 tsm7n90ci tsm7n90cz.pdf

TSM7N90CI TSM7N90CI

TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi

 9.1. Size:350K  taiwansemi
 tsm7n65cz.pdf

TSM7N90CI TSM7N90CI

TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe

 9.2. Size:395K  taiwansemi
 tsm7n65ci.pdf

TSM7N90CI TSM7N90CI

TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 650 1.2 @ VGS =10V 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

 9.3. Size:417K  taiwansemi
 tsm7n60ci tsm7n60cz.pdf

TSM7N90CI TSM7N90CI

TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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