TSM9434DCS Todos los transistores

 

TSM9434DCS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSM9434DCS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 6.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 191 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOP-8

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TSM9434DCS datasheet

 ..1. Size:361K  taiwansemi
tsm9434dcs.pdf pdf_icon

TSM9434DCS

TSM9434D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 40 @ VGS = -4.5V -6.4 -20 4. Gate 2 5. Drain 2 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Appli

 7.1. Size:223K  taiwansemi
tsm9434cs.pdf pdf_icon

TSM9434DCS

TSM9434 20V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m ) ID (A) 3. Source 6. Drain 40 @ VGS = -4.5V -6.4 4. Gate 5. Drain -20 60 @ VGS = -2.5V -5.1 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch

 8.1. Size:226K  taiwansemi
tsm9435cs.pdf pdf_icon

TSM9434DCS

TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m ) ID (A) 3. Source 60 @ VGS = 10V -5.3 4. Gate -30 5, 6, 7, 8. Drain 90 @ VGS = 4.5V -4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Swit

 9.1. Size:379K  taiwansemi
tsm9428dcs.pdf pdf_icon

TSM9434DCS

TSM9428D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 3. Source 2 30 @ VGS = 4.5V 6.0 4. Gate 2 20 40 @ VGS = 2.5V 5.2 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch P

Otros transistores... TSM8N70CI , TSM8N80CI , TSM8N80CZ , TSM9409CS , TSM9426DCS , TSM9428CS , TSM9428DCS , TSM9434CS , AON7408 , TSM9435CS , TSM9926DCS , TSM9933DCS , TSM9966DCX6 , TSM9N50CI , TSM9N50CZ , TSM9N90CI , TSM9N90CN .

History: TK20N60W5

 

 

 


History: TK20N60W5

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