BUK127-50DL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK127-50DL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 0.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de MOSFET BUK127-50DL
BUK127-50DL Datasheet (PDF)
buk127-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI
buk127-50dl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI
buk127-50gt.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK127-50GT Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 2.1 AAPPLICATI
buk128-50dl.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK128-50DL SMD version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD To
buk129-50dl.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK129-50DL SMD version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD T
buk124-50l.pdf
Philips Semiconductors Product Specification Logic level TOPFET BUK124-50L TO-220 version of BUK135-50LDESCRIPTION QUICK REFERENCE DATAMonolithic logic level protected SYMBOL PARAMETER MAX. UNITpower MOSFET using TOPFET2technology assembled in a 5 pin VDS Continuous drain source voltage 50 Vsurface mounting plastic package. ID Continuous drain current 30 APtot Total power dissi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918