BUK452-100B Todos los transistores

 

BUK452-100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK452-100B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-220AB
     - Selección de transistores por parámetros

 

BUK452-100B Datasheet (PDF)

 ..1. Size:61K  philips
 buk452-100b.pdf pdf_icon

BUK452-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK452 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 11 10 A(SMPS),

 4.1. Size:56K  philips
 buk452-100a-b 1.pdf pdf_icon

BUK452-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK452 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 11 10 A(SMPS),

 4.2. Size:228K  inchange semiconductor
 buk452-100.pdf pdf_icon

BUK452-100B

isc N-Channel MOSFET Transistor BUK452-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU

 7.1. Size:54K  philips
 buk452-60a-b.pdf pdf_icon

BUK452-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK452 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 15 14 A(SMPS), motor

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM2301A | NCEP070N10GU | RJK0629DPK | 2SK2907-01 | WMQ46N03T1 | RUH1H130S | FDB6690S

 

 
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