BUK456-100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK456-100B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET BUK456-100B

BUK456-100B Datasheet (PDF)

..1. Size:55K philips
buk456-100b.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK456 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 34 32 A(SMPS),

4.1. Size:53K philips
buk456-100a-b 2.pdf

4.2. Size:228K inchange semiconductor
buk456-100.pdf

isc N-Channel MOSFET Transistor BUK456-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU

7.1. Size:54K philips
buk456-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK456 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 52 51 A(SMPS), motor

7.2. Size:50K philips
buk456-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK456 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 19 17 A(SMPS),

7.3. Size:49K philips
buk456-800a-b.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK456 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 4 3.5 A(SMPS),

7.4. Size:67K philips
buk456-60a-b 2.pdf

7.5. Size:57K philips
buk456-60h 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 60 AAutomotive and general purpose Ptot Total power dissipation 150 Wswitch

7.6. Size:229K inchange semiconductor
buk456-200.pdf

isc N-Channel MOSFET Transistor BUK456-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU

7.7. Size:229K inchange semiconductor
buk456-800.pdf

isc N-Channel MOSFET Transistor BUK456-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU

7.8. Size:229K inchange semiconductor
buk456-60.pdf

isc N-Channel MOSFET Transistor BUK456-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMUM

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: