BUK456-100B PDF and Equivalents Search

 ..1. Size:55K  philips
 buk456-100b.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 34 32 A (SMPS), ... See More ⇒

 4.1. Size:53K  philips
 buk456-100a-b 2.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 34 32 A (SMPS), ... See More ⇒

 4.2. Size:228K  inchange semiconductor
 buk456-100.pdf

isc N-Channel MOSFET Transistor BUK456-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU... See More ⇒

 7.1. Size:54K  philips
 buk456-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 52 51 A (SMPS), motor... See More ⇒

 7.2. Size:50K  philips
 buk456-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A (SMPS), ... See More ⇒

 7.3. Size:49K  philips
 buk456-800a-b.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A (SMPS), ... See More ⇒

 7.4. Size:67K  philips
 buk456-60a-b 2.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 52 51 A (SMPS), motor... See More ⇒

 7.5. Size:57K  philips
 buk456-60h 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 60 A Automotive and general purpose Ptot Total power dissipation 150 W switch... See More ⇒

 7.6. Size:229K  inchange semiconductor
 buk456-200.pdf

isc N-Channel MOSFET Transistor BUK456-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU... See More ⇒

 7.7. Size:229K  inchange semiconductor
 buk456-800.pdf

isc N-Channel MOSFET Transistor BUK456-800A/B DESCRIPTION Drain Source Voltage- V =800V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU... See More ⇒

 7.8. Size:229K  inchange semiconductor
 buk456-60.pdf

isc N-Channel MOSFET Transistor BUK456-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM ... See More ⇒