BUK553-100B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK553-100B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm

Encapsulados: TO-220AB

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BUK553-100B datasheet

 ..1. Size:60K  philips
 buk553-100b.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain

 4.1. Size:56K  philips
 buk553-100a-b 1.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain

 7.1. Size:69K  philips
 buk553-48c 1.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 V The device is intended for use in ID Drain current (

 7.2. Size:54K  philips
 buk553-60a-b 1.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre

MOSTRAR MÁS

Otros transistores... BUK1M200-50SGTD, BUK452-100B, BUK455-100B, BUK455-200B, BUK456-100B, BUK472-100A, BUK472-100B, BUK543-100B, HY1906P, BUK553-60A, BUK553-60B, BUK555-200B, BUK6207-30C, BUK6208-40C, BUK6240-75C, BUK652R7-30C, BUK6C2R1-55C