All MOSFET. BUK553-100B Datasheet

 

BUK553-100B Datasheet and Replacement


   Type Designator: BUK553-100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-220AB
 

 BUK553-100B substitution

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BUK553-100B Datasheet (PDF)

 ..1. Size:60K  philips
 buk553-100b.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

 4.1. Size:56K  philips
 buk553-100a-b 1.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

 7.1. Size:69K  philips
 buk553-48c 1.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 VThe device is intended for use in ID Drain current (

 7.2. Size:54K  philips
 buk553-60a-b 1.pdf pdf_icon

BUK553-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: YJS12G06D | BUK543-100B | ZXMN0545G4 | AP60U02GH | IPU075N03LG | IRL530NL | AFP4948

Keywords - BUK553-100B MOSFET datasheet

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