BUK6207-30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK6207-30C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 128 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   Qgⓘ - Carga de la puerta: 54.8 nC
   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 484 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: DPAK

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BUK6207-30C Datasheet (PDF)

..1. Size:363K philips
buk6207-30c.pdf

BUK6207-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

..2. Size:363K nxp
buk6207-30c.pdf

6.1. Size:160K philips
buk6207-55c.pdf

BUK6207-55CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

8.1. Size:359K philips
buk6209-30c.pdf

BUK6209-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

8.2. Size:365K philips
buk6208-40c.pdf

BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

8.3. Size:365K nxp
buk6208-40c.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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