BUK6207-30C MOSFET PDF: N-Ch, 30V, 90A. Full specification with pinout and replacement list

BUK6207-30C PDF Specs and Replacement

   Type Designator: BUK6207-30C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 128 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   Qg ⓘ - Total Gate Charge: 54.8 nC
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 484 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: DPAK

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BUK6207-30C PDF Specs

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BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

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BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒

8.1. Size:359K philips
buk6209-30c.pdf pdf_icon

BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒