BUK6207-30C Datasheet. Specs and Replacement

Type Designator: BUK6207-30C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 128 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 484 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: DPAK

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BUK6207-30C datasheet

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BUK6207-30C

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

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BUK6207-30C

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

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BUK6207-30C

BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒

 8.1. Size:359K  philips
 buk6209-30c.pdf pdf_icon

BUK6207-30C

BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

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Detailed specifications: BUK456-100B, BUK472-100A, BUK472-100B, BUK543-100B, BUK553-100B, BUK553-60A, BUK553-60B, BUK555-200B, MMIS60R580P, BUK6208-40C, BUK6240-75C, BUK652R7-30C, BUK6C2R1-55C, BUK6C3R3-75C, BUK7213-40A, BUK7505-30A, BUK7514-60E

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.