BUK6208-40C Todos los transistores

 

BUK6208-40C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK6208-40C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 128 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48.6 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: DPAK
 

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BUK6208-40C Datasheet (PDF)

 ..1. Size:365K  philips
 buk6208-40c.pdf pdf_icon

BUK6208-40C

BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 ..2. Size:365K  nxp
 buk6208-40c.pdf pdf_icon

BUK6208-40C

BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.1. Size:359K  philips
 buk6209-30c.pdf pdf_icon

BUK6208-40C

BUK6209-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.2. Size:160K  philips
 buk6207-55c.pdf pdf_icon

BUK6208-40C

BUK6207-55CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

MOSTRAR MÁS

Otros transistores... BUK472-100A , BUK472-100B , BUK543-100B , BUK553-100B , BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , K2611 , BUK6240-75C , BUK652R7-30C , BUK6C2R1-55C , BUK6C3R3-75C , BUK7213-40A , BUK7505-30A , BUK7514-60E , BUK751R6-30E .

History: 2SK3029 | SIHP11N80E | SFS04R02GF | R6009JNX | UTT25P10G-TA3-T | SGSP316 | BUK555-200B

 

 
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