BUK6208-40C Specs and Replacement
Type Designator: BUK6208-40C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 128 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48.6 nS
Cossⓘ - Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: DPAK
BUK6208-40C substitution
- MOSFET ⓘ Cross-Reference Search
BUK6208-40C datasheet
buk6208-40c.pdf
BUK6208-40C N-channel TrenchMOS intermediate level FET Rev. 3 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒
buk6208-40c.pdf
BUK6208-40C N-channel TrenchMOS intermediate level FET Rev. 3 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒
buk6209-30c.pdf
BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒
buk6207-55c.pdf
BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒
Detailed specifications: BUK472-100A, BUK472-100B, BUK543-100B, BUK553-100B, BUK553-60A, BUK553-60B, BUK555-200B, BUK6207-30C, 75N75, BUK6240-75C, BUK652R7-30C, BUK6C2R1-55C, BUK6C3R3-75C, BUK7213-40A, BUK7505-30A, BUK7514-60E, BUK751R6-30E
Keywords - BUK6208-40C MOSFET specs
BUK6208-40C cross reference
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BUK6208-40C substitution
BUK6208-40C replacement
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