All MOSFET. BUK6208-40C Datasheet

 

BUK6208-40C Datasheet and Replacement


   Type Designator: BUK6208-40C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 128 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 48.6 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: DPAK
 

 BUK6208-40C substitution

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BUK6208-40C Datasheet (PDF)

 ..1. Size:365K  philips
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BUK6208-40C

BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 ..2. Size:365K  nxp
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BUK6208-40C

BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.1. Size:359K  philips
 buk6209-30c.pdf pdf_icon

BUK6208-40C

BUK6209-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.2. Size:160K  philips
 buk6207-55c.pdf pdf_icon

BUK6208-40C

BUK6207-55CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

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Datasheet: BUK472-100A , BUK472-100B , BUK543-100B , BUK553-100B , BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , IRF520 , BUK6240-75C , BUK652R7-30C , BUK6C2R1-55C , BUK6C3R3-75C , BUK7213-40A , BUK7505-30A , BUK7514-60E , BUK751R6-30E .

History: 2N3957 | NX2020N2 | AP15T15GH | HM60N04K | AP10N012IN | AOT10N60

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