BUK6240-75C
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK6240-75C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 75
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 22
V
|Id|ⓘ - Corriente continua de drenaje: 22
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.8
nS
Cossⓘ - Capacitancia
de salida: 84
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046
Ohm
Paquete / Cubierta:
DPAK
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BUK6240-75C
Datasheet (PDF)
..1. Size:351K philips
buk6240-75c.pdf 
BUK6240-75CN-channel TrenchMOS FETRev. 1 27 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo
..2. Size:351K nxp
buk6240-75c.pdf
BUK6240-75CN-channel TrenchMOS FETRev. 1 27 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo
8.1. Size:194K philips
buk624r5-30c.pdf
BUK624R5-30CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.1. Size:364K philips
buk6218-40c.pdf
BUK6218-40CN-channel TrenchMOS intermediate level FETRev. 1 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a
9.2. Size:359K philips
buk6209-30c.pdf
BUK6209-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.3. Size:160K philips
buk6207-55c.pdf
BUK6207-55CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.4. Size:180K philips
buk6212-40c.pdf
BUK6212-40CN-channel TrenchMOS intermediate level FETRev. 2 21 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica
9.5. Size:196K philips
buk6228-55c.pdf
BUK6228-55CN-channel TrenchMOS intermediate level FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.6. Size:363K philips
buk6207-30c.pdf
BUK6207-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.7. Size:198K philips
buk6226-75c.pdf
BUK6226-75CN-channel TrenchMOS FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo
9.8. Size:357K philips
buk6210-55c.pdf
BUK6210-55CN-channel TrenchMOS intermediate level FETRev. 2 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.9. Size:171K philips
buk6213-30c.pdf
BUK6213-30CN-channel TrenchMOS intermediate level FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.10. Size:365K philips
buk6208-40c.pdf
BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.11. Size:201K philips
buk6217-55c.pdf
BUK6217-55CN-channel TrenchMOS intermediate level FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.12. Size:211K philips
buk6211-75c.pdf
BUK6211-75CN-channel TrenchMOS FETRev. 02 28 September 2010 Product data sheet1. Product profile1.1 General descriptionStandard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performan
9.13. Size:218K philips
buk6215-75c.pdf
BUK6215-75CN-channel TrenchMOS FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance
9.14. Size:193K philips
buk625r0-40c.pdf
BUK625R0-40CN-channel TrenchMOS intermediate level FETRev. 1 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.15. Size:363K nxp
buk6207-30c.pdf
BUK6207-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.16. Size:733K nxp
buk626r2-40c.pdf
BUK626R2-40CN-channel TrenchMOS intermediate level FETRev. 1 12 July 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per
9.17. Size:365K nxp
buk6208-40c.pdf
BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.18. Size:695K nxp
buk6213-30a.pdf
BUK6213-30AN-channel TrenchMOS intermediate level FETRev. 03 2 February 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio
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History: 2SK2874-01L
| BUK7Y12-100E
| 2SK3033
| STW28NM60ND
