BUK6240-75C
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK6240-75C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 22
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 22
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 21.4
nC
trⓘ -
Время нарастания: 17.8
ns
Cossⓘ - Выходная емкость: 84
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.046
Ohm
Тип корпуса:
DPAK
- подбор MOSFET транзистора по параметрам
BUK6240-75C
Datasheet (PDF)
..1. Size:351K philips
buk6240-75c.pdf 
BUK6240-75CN-channel TrenchMOS FETRev. 1 27 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo
..2. Size:351K nxp
buk6240-75c.pdf 
BUK6240-75CN-channel TrenchMOS FETRev. 1 27 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo
8.1. Size:194K philips
buk624r5-30c.pdf 
BUK624R5-30CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.1. Size:364K philips
buk6218-40c.pdf 
BUK6218-40CN-channel TrenchMOS intermediate level FETRev. 1 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a
9.2. Size:359K philips
buk6209-30c.pdf 
BUK6209-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.3. Size:160K philips
buk6207-55c.pdf 
BUK6207-55CN-channel TrenchMOS intermediate level FETRev. 2 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.4. Size:180K philips
buk6212-40c.pdf 
BUK6212-40CN-channel TrenchMOS intermediate level FETRev. 2 21 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica
9.5. Size:196K philips
buk6228-55c.pdf 
BUK6228-55CN-channel TrenchMOS intermediate level FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.6. Size:363K philips
buk6207-30c.pdf 
BUK6207-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.7. Size:198K philips
buk6226-75c.pdf 
BUK6226-75CN-channel TrenchMOS FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo
9.8. Size:357K philips
buk6210-55c.pdf 
BUK6210-55CN-channel TrenchMOS intermediate level FETRev. 2 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.9. Size:171K philips
buk6213-30c.pdf 
BUK6213-30CN-channel TrenchMOS intermediate level FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.10. Size:365K philips
buk6208-40c.pdf 
BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.11. Size:201K philips
buk6217-55c.pdf 
BUK6217-55CN-channel TrenchMOS intermediate level FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.12. Size:211K philips
buk6211-75c.pdf 
BUK6211-75CN-channel TrenchMOS FETRev. 02 28 September 2010 Product data sheet1. Product profile1.1 General descriptionStandard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performan
9.13. Size:218K philips
buk6215-75c.pdf 
BUK6215-75CN-channel TrenchMOS FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance
9.14. Size:193K philips
buk625r0-40c.pdf 
BUK625R0-40CN-channel TrenchMOS intermediate level FETRev. 1 17 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.15. Size:363K nxp
buk6207-30c.pdf 
BUK6207-30CN-channel TrenchMOS intermediate level FETRev. 2 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.16. Size:733K nxp
buk626r2-40c.pdf 
BUK626R2-40CN-channel TrenchMOS intermediate level FETRev. 1 12 July 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per
9.17. Size:365K nxp
buk6208-40c.pdf 
BUK6208-40CN-channel TrenchMOS intermediate level FETRev. 3 1 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe
9.18. Size:695K nxp
buk6213-30a.pdf 
BUK6213-30AN-channel TrenchMOS intermediate level FETRev. 03 2 February 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio
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History: SFG10S12BF
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| 2N70Z
| IXTA180N085T7
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| HGD155N15S
