BUK754R7-60E Todos los transistores

 

BUK754R7-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK754R7-60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 234 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 637 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm

Encapsulados: TO-220AB

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BUK754R7-60E datasheet

 ..1. Size:210K  nxp
buk754r7-60e.pdf pdf_icon

BUK754R7-60E

BUK754R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe

 7.1. Size:273K  philips
buk754r3-75c buk7e4r3-75c.pdf pdf_icon

BUK754R7-60E

BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar

 7.2. Size:101K  philips
buk754r0-55b buk764r0-55b.pdf pdf_icon

BUK754R7-60E

BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

 7.3. Size:297K  philips
buk754r3-40b buk764r3-40b.pdf pdf_icon

BUK754R7-60E

BUK75/764R3-40B TrenchMOS standard level FET Rev. 01 09 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK754R3-40B in SOT78 (TO-220AB) BUK764R3-40B in SOT404 (D2-PAK). 1.2 Features Very low on

Otros transistores... BUK751R6-30E , BUK751R8-40E , BUK7524-55A , BUK752R3-40E , BUK752R7-60E , BUK753R1-40E , BUK753R5-60E , BUK753R8-80E , MMIS60R580P , BUK755R4-100E , BUK758R3-40E , BUK7605-30A , BUK7613-100E , BUK7613-60E , BUK7614-55 , BUK76150-55A , BUK7615-100A .

History: BSS131 | MDP15N60GTH

 

 

 

 

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