BUK76150-55A Todos los transistores

 

BUK76150-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK76150-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: D2PAK
 

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BUK76150-55A Datasheet (PDF)

 ..1. Size:292K  philips
 buk76150-55a.pdf pdf_icon

BUK76150-55A

BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat

 ..2. Size:299K  philips
 buk75150-55a buk76150-55a.pdf pdf_icon

BUK76150-55A

BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat

 6.1. Size:302K  philips
 buk75150 buk76150 55a-01.pdf pdf_icon

BUK76150-55A

BUK75150-55A;BUK76150-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK75150-55A in SOT78 (TO-220AB)BUK76150-55A in SOT404 (D 2-PAK).2. Features TrenchMOS

 7.1. Size:55K  philips
 buk7615-100a 1.pdf pdf_icon

BUK76150-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the d

MOSTRAR MÁS

Otros transistores... BUK753R8-80E , BUK754R7-60E , BUK755R4-100E , BUK758R3-40E , BUK7605-30A , BUK7613-100E , BUK7613-60E , BUK7614-55 , IRFZ44N , BUK7615-100A , BUK7616-55A , BUK761R3-30E , BUK761R4-30E , BUK761R5-40E , BUK761R6-40E , BUK761R7-40E , BUK762R0-40E .

History: MDP15N60GTH | HM4N65I | SVF5N65D | 2SK3352B | IXTP4N45A | BUK752R7-60E | 2SK2972

 

 
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