BUK761R6-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK761R6-40E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 349 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 1620 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00157 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de BUK761R6-40E MOSFET
BUK761R6-40E Datasheet (PDF)
buk761r6-40e.pdf

BUK761R6-40EN-channel TrenchMOS standard level FET5 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rate
buk761r8-30c.pdf

BUK761R8-30CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol
buk761r5-40e.pdf

BUK761R5-40EN-channel TrenchMOS standard level FET7 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated
buk761r7-40e.pdf

BUK761R7-40EN-channel TrenchMOS standard level FET4 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated
Otros transistores... BUK7613-60E , BUK7614-55 , BUK76150-55A , BUK7615-100A , BUK7616-55A , BUK761R3-30E , BUK761R4-30E , BUK761R5-40E , IRF540N , BUK761R7-40E , BUK762R0-40E , BUK762R4-60E , BUK762R6-40E , BUK762R6-60E , BUK762R9-40E , BUK7631-100E , BUK763R1-60E .
History: BSZ100N03MSG | 2SK3506 | BSZ035N03LSG
History: BSZ100N03MSG | 2SK3506 | BSZ035N03LSG



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
p60nf06 datasheet | 2sc4468 | ru6888r | 2sc1815y | ktc3964 | s9013 transistor equivalent | 60n60 mosfet | 2sc2412