BUK761R6-40E MOSFET Datasheet: N-Ch, 40V, 120A. Full specification with pinout and replacement list

BUK761R6-40E Specs and Replacement

   Type Designator: BUK761R6-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 349 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00157 Ohm
   Package: D2PAK

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BUK761R6-40E datasheet

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BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol... See More ⇒

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BUK761R5-40E N-channel TrenchMOS standard level FET 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated ... See More ⇒

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