BUK765R0-100E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK765R0-100E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 770 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: D2PAK
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BUK765R0-100E Datasheet (PDF)
buk765r0-100e.pdf

BUK765R0-100EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant
buk755r2-40b buk765r2-40b.pdf

BUK75/765R2-40BTrenchMOS standard level FETRev. 01 14 May 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK755R2-40B in SOT78 (TO-220AB)BUK765R2-40B in SOT404 (D2-PAK).1.2 Features TrenchMOS
buk765r3-40e.pdf

BUK765R3-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
buk765r2-40b.pdf

BUK765R2-40BN-channel TrenchMOS standard level FETRev. 3 22 November 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.
Otros transistores... BUK7631-100E , BUK763R1-60E , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , BUK764R0-40E , BUK764R2-80E , BUK764R4-60E , IRFP250N , BUK765R3-40E , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , BUK769R6-80E , BUK7E13-60E , BUK7E1R6-30E .
History: SSM3K127TU | 2SK3442 | HGW055N10SL | 2SK3355-ZJ | QM2403V | SI4406DY
History: SSM3K127TU | 2SK3442 | HGW055N10SL | 2SK3355-ZJ | QM2403V | SI4406DY



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