BUK765R0-100E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK765R0-100E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 357 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 180 nC
Время нарастания (tr): 62 ns
Выходная емкость (Cd): 770 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.005 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK765R0-100E
BUK765R0-100E Datasheet (PDF)
buk765r0-100e.pdf
BUK765R0-100EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant
buk755r2-40b buk765r2-40b.pdf
BUK75/765R2-40BTrenchMOS standard level FETRev. 01 14 May 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK755R2-40B in SOT78 (TO-220AB)BUK765R2-40B in SOT404 (D2-PAK).1.2 Features TrenchMOS
buk765r3-40e.pdf
BUK765R3-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
buk765r2-40b.pdf
BUK765R2-40BN-channel TrenchMOS standard level FETRev. 3 22 November 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.
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