BUK765R0-100E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK765R0-100E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 357 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 770 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: D2PAK
- подбор MOSFET транзистора по параметрам
BUK765R0-100E Datasheet (PDF)
buk765r0-100e.pdf

BUK765R0-100EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant
buk755r2-40b buk765r2-40b.pdf

BUK75/765R2-40BTrenchMOS standard level FETRev. 01 14 May 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK755R2-40B in SOT78 (TO-220AB)BUK765R2-40B in SOT404 (D2-PAK).1.2 Features TrenchMOS
buk765r3-40e.pdf

BUK765R3-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
buk765r2-40b.pdf

BUK765R2-40BN-channel TrenchMOS standard level FETRev. 3 22 November 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SWP10N65 | UTT18P10G-TA3-T | UT8205A | HUF76145S3S | SVG086R0NDTR | SVG032R4NL3 | CED540N
History: SWP10N65 | UTT18P10G-TA3-T | UT8205A | HUF76145S3S | SVG086R0NDTR | SVG032R4NL3 | CED540N



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
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