BUK7E13-60E Todos los transistores

 

BUK7E13-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7E13-60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.2 nS

Cossⓘ - Capacitancia de salida: 197 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: I2PAK

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BUK7E13-60E datasheet

 ..1. Size:205K  nxp
 buk7e13-60e.pdf pdf_icon

BUK7E13-60E

BUK7E13-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe

 8.1. Size:209K  nxp
 buk7e1r8-40e.pdf pdf_icon

BUK7E13-60E

BUK7E1R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep

 8.2. Size:207K  nxp
 buk7e1r9-40e.pdf pdf_icon

BUK7E13-60E

BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe

 8.3. Size:208K  nxp
 buk7e1r6-30e.pdf pdf_icon

BUK7E13-60E

BUK7E1R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep

MOSTRAR MÁS

Otros transistores... BUK764R4-60E , BUK765R0-100E , BUK765R3-40E , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , BUK769R6-80E , IRF9540 , BUK7E1R6-30E , BUK7E1R8-40E , BUK7E1R9-40E , BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E .

History: BUK7107-55ATE | BUK7E2R6-60E | 2SJ202

 

 

 

 

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