BUK7E13-60E Todos los transistores

 

BUK7E13-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7E13-60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 197 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: I2PAK
 

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BUK7E13-60E Datasheet (PDF)

 ..1. Size:205K  nxp
 buk7e13-60e.pdf pdf_icon

BUK7E13-60E

BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.1. Size:209K  nxp
 buk7e1r8-40e.pdf pdf_icon

BUK7E13-60E

BUK7E1R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 8.2. Size:207K  nxp
 buk7e1r9-40e.pdf pdf_icon

BUK7E13-60E

BUK7E1R9-40EN-channel TrenchMOS standard level FET5 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.3. Size:208K  nxp
 buk7e1r6-30e.pdf pdf_icon

BUK7E13-60E

BUK7E1R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

MOSTRAR MÁS

Otros transistores... BUK764R4-60E , BUK765R0-100E , BUK765R3-40E , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , BUK769R6-80E , K3569 , BUK7E1R6-30E , BUK7E1R8-40E , BUK7E1R9-40E , BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E .

History: CS20N65F | FQPF7N10L | AOT502 | AP15P10GJ-HF | BUK7613-60E | SDF50NA20GBF | UPA2815T1S

 

 
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