All MOSFET. BUK7E13-60E Datasheet

 

BUK7E13-60E Datasheet and Replacement


   Type Designator: BUK7E13-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 197 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: I2PAK
 

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BUK7E13-60E Datasheet (PDF)

 ..1. Size:205K  nxp
 buk7e13-60e.pdf pdf_icon

BUK7E13-60E

BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.1. Size:209K  nxp
 buk7e1r8-40e.pdf pdf_icon

BUK7E13-60E

BUK7E1R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 8.2. Size:207K  nxp
 buk7e1r9-40e.pdf pdf_icon

BUK7E13-60E

BUK7E1R9-40EN-channel TrenchMOS standard level FET5 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.3. Size:208K  nxp
 buk7e1r6-30e.pdf pdf_icon

BUK7E13-60E

BUK7E1R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

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Datasheet: BUK764R4-60E , BUK765R0-100E , BUK765R3-40E , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , BUK769R6-80E , IRF9540 , BUK7E1R6-30E , BUK7E1R8-40E , BUK7E1R9-40E , BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E .

History: TPB65R260M | TPB80R750C | TPA65R600M

Keywords - BUK7E13-60E MOSFET datasheet

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