BUK7E13-60E MOSFET Datasheet: N-Ch, 60V, 58A. Full specification with pinout and replacement list

BUK7E13-60E Specs and Replacement

Type Designator: BUK7E13-60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 197 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: I2PAK

BUK7E13-60E substitution

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BUK7E13-60E datasheet

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BUK7E13-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒

8.1. Size:209K nxp
buk7e1r8-40e.pdf pdf_icon

BUK7E1R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒

8.2. Size:207K nxp
buk7e1r9-40e.pdf pdf_icon

BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒

8.3. Size:208K nxp
buk7e1r6-30e.pdf pdf_icon

BUK7E1R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒

Detailed specifications: BUK764R4-60E, BUK765R0-100E, BUK765R3-40E, BUK766R0-60E, BUK768R1-100E, BUK768R1-40E, BUK768R3-60E, BUK769R6-80E, IRF9540, BUK7E1R6-30E, BUK7E1R8-40E, BUK7E1R9-40E, BUK7E2R3-40E, BUK7E2R6-60E, BUK7E3R1-40E, BUK7E3R5-60E, BUK7E4R0-80E