BUK7E5R2-100E Todos los transistores

 

BUK7E5R2-100E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7E5R2-100E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 349 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: I2PAK
 

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BUK7E5R2-100E datasheet

 ..1. Size:206K  nxp
buk7e5r2-100e.pdf pdf_icon

BUK7E5R2-100E

BUK7E5R2-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Re

 9.1. Size:221K  philips
buk7e2r3-40c.pdf pdf_icon

BUK7E5R2-100E

BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance

 9.2. Size:273K  philips
buk754r3-75c buk7e4r3-75c.pdf pdf_icon

BUK7E5R2-100E

BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar

 9.3. Size:202K  philips
buk7e04-40a.pdf pdf_icon

BUK7E5R2-100E

BUK7E04-40A N-channel TrenchMOS standard level FET Rev. 03 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe

Otros transistores... BUK7E1R8-40E , BUK7E1R9-40E , BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E , BUK7E4R6-60E , IRFP260 , BUK7E8R3-40E , BUK7K12-60E , BUK7K17-60E , BUK7K18-40E , BUK7K25-40E , BUK7K35-60E , BUK7K52-60E , BUK7K5R1-30E .

History: FMH17N60ES | PJD5NA80 | IXFT4N100Q | STF8234

 

 
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