BUK7E5R2-100E Specs and Replacement
Type Designator: BUK7E5R2-100E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ -
Output Capacitance: 770 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: I2PAK
BUK7E5R2-100E substitution
- MOSFET ⓘ Cross-Reference Search
BUK7E5R2-100E datasheet
..1. Size:206K nxp
buk7e5r2-100e.pdf 
BUK7E5R2-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Re... See More ⇒
9.1. Size:221K philips
buk7e2r3-40c.pdf
BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance ... See More ⇒
9.2. Size:273K philips
buk754r3-75c buk7e4r3-75c.pdf
BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar... See More ⇒
9.3. Size:202K philips
buk7e04-40a.pdf
BUK7E04-40A N-channel TrenchMOS standard level FET Rev. 03 15 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒
9.4. Size:79K philips
buk7e07-55b.pdf
BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 29 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive ... See More ⇒
9.5. Size:208K nxp
buk7e2r6-60e.pdf
BUK7E2R6-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.6. Size:211K nxp
buk7e3r1-40e.pdf
BUK7E3R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.7. Size:209K nxp
buk7e1r8-40e.pdf
BUK7E1R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.8. Size:210K nxp
buk7e8r3-40e.pdf
BUK7E8R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.9. Size:207K nxp
buk7e1r9-40e.pdf
BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒
9.10. Size:208K nxp
buk7e1r6-30e.pdf
BUK7E1R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.11. Size:205K nxp
buk7e13-60e.pdf
BUK7E13-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe... See More ⇒
9.12. Size:211K nxp
buk7e2r3-40e.pdf
BUK7E2R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.13. Size:208K nxp
buk7e4r6-60e.pdf
BUK7E4R6-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.14. Size:208K nxp
buk7e4r0-80e.pdf
BUK7E4R0-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
9.15. Size:208K nxp
buk7e3r5-60e.pdf
BUK7E3R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Rep... See More ⇒
Detailed specifications: BUK7E1R8-40E, BUK7E1R9-40E, BUK7E2R3-40E, BUK7E2R6-60E, BUK7E3R1-40E, BUK7E3R5-60E, BUK7E4R0-80E, BUK7E4R6-60E, IRFP260, BUK7E8R3-40E, BUK7K12-60E, BUK7K17-60E, BUK7K18-40E, BUK7K25-40E, BUK7K35-60E, BUK7K52-60E, BUK7K5R1-30E
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