BUK7E8R3-40E Todos los transistores

 

BUK7E8R3-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7E8R3-40E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: I2PAK

 Búsqueda de reemplazo de MOSFET BUK7E8R3-40E

 

BUK7E8R3-40E Datasheet (PDF)

 ..1. Size:210K  nxp
buk7e8r3-40e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E8R3-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.1. Size:221K  philips
buk7e2r3-40c.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E2R3-40CN-channel TrenchMOS standard level FETRev. 03 26 January 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance

 9.2. Size:273K  philips
buk754r3-75c buk7e4r3-75c.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK754R3-75C; BUK7E4R3-75CN-channel TrenchMOS standard level FETRev. 01 10 August 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar

 9.3. Size:202K  philips
buk7e04-40a.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E04-40AN-channel TrenchMOS standard level FETRev. 03 15 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

 9.4. Size:79K  philips
buk7e07-55b.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E07-55BN-channel TrenchMOS standard level FETRev. 01 29 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology. This product hasbeen designed and qualified to the appropriate AEC standard for use in Automotive

 9.5. Size:206K  nxp
buk7e5r2-100e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E5R2-100EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Re

 9.6. Size:208K  nxp
buk7e2r6-60e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E2R6-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.7. Size:211K  nxp
buk7e3r1-40e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E3R1-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.8. Size:209K  nxp
buk7e1r8-40e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E1R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.9. Size:207K  nxp
buk7e1r9-40e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E1R9-40EN-channel TrenchMOS standard level FET5 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 9.10. Size:208K  nxp
buk7e1r6-30e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E1R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.11. Size:205K  nxp
buk7e13-60e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 9.12. Size:211K  nxp
buk7e2r3-40e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E2R3-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.13. Size:208K  nxp
buk7e4r6-60e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E4R6-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.14. Size:208K  nxp
buk7e4r0-80e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E4R0-80EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 9.15. Size:208K  nxp
buk7e3r5-60e.pdf

BUK7E8R3-40E
BUK7E8R3-40E

BUK7E3R5-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

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