BUK7K12-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7K12-60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.5 nS
Cossⓘ - Capacitancia de salida: 247 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
Encapsulados: LFPAK56D
Búsqueda de reemplazo de BUK7K12-60E MOSFET
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BUK7K12-60E datasheet
buk7k12-60e.pdf
BUK7K12-60E Dual N-channel 60 V, 9.3 m standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
buk7k134-100e.pdf
BUK7K134-100E Dual N-channel 100 V, 121 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
buk7k17-80e.pdf
BUK7K17-80E Dual N-channel 80 V, 17 m standard level MOSFET 10 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
buk7k15-80e.pdf
BUK7K15-80E Dual N-channel 80 V, 15 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
Otros transistores... BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E , BUK7E4R6-60E , BUK7E5R2-100E , BUK7E8R3-40E , SPP20N60C3 , BUK7K17-60E , BUK7K18-40E , BUK7K25-40E , BUK7K35-60E , BUK7K52-60E , BUK7K5R1-30E , BUK7K5R6-30E , BUK7K6R2-40E .
History: UPA1932TE | BLF6G27LS-40P
History: UPA1932TE | BLF6G27LS-40P
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