BUK7K12-60E. Аналоги и основные параметры
Наименование производителя: BUK7K12-60E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12.5 ns
Cossⓘ - Выходная емкость: 247 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0093 Ohm
Тип корпуса: LFPAK56D
Аналог (замена) для BUK7K12-60E
- подборⓘ MOSFET транзистора по параметрам
BUK7K12-60E даташит
buk7k12-60e.pdf
BUK7K12-60E Dual N-channel 60 V, 9.3 m standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
buk7k134-100e.pdf
BUK7K134-100E Dual N-channel 100 V, 121 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
buk7k17-80e.pdf
BUK7K17-80E Dual N-channel 80 V, 17 m standard level MOSFET 10 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
buk7k15-80e.pdf
BUK7K15-80E Dual N-channel 80 V, 15 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
Другие MOSFET... BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E , BUK7E4R0-80E , BUK7E4R6-60E , BUK7E5R2-100E , BUK7E8R3-40E , SPP20N60C3 , BUK7K17-60E , BUK7K18-40E , BUK7K25-40E , BUK7K35-60E , BUK7K52-60E , BUK7K5R1-30E , BUK7K5R6-30E , BUK7K6R2-40E .
History: BUK763R9-60E | 2SK3635
History: BUK763R9-60E | 2SK3635
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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