BUK9509-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9509-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 211 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 108 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 60 nC
   trⓘ - Tiempo de subida: 149 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET BUK9509-55A

BUK9509-55A Datasheet (PDF)

..1. Size:313K philips
buk9509-55a buk9509-55a buk9609-55a.pdf

BUK95/9609-55ATrenchMOS logic level FETRev. 01 21 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-55A in SOT78 (TO-220AB)BUK9609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia

7.1. Size:326K philips
buk9509 buk9609 75a-02.pdf

BUK9509-75A; BUK9609-75ATrenchMOS logic level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-75A in SOT78 (TO-220AB)BUK9609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techn

8.1. Size:52K philips
buk9508-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

8.2. Size:358K philips
buk9504-40a buk9604-40a buk9e04-40a.pdf

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr

8.3. Size:300K philips
buk9507-30b buk9607-30b.pdf

BUK95/9607-30BTrenchMOS logic level FETRev. 01 25 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9507-30B in SOT78 (TO-220AB)BUK9607-30B in SOT404 (D2-PAK).1.2 Features Low on-state resi

8.4. Size:328K philips
buk9508-55a buk9508-55a buk9608-55a.pdf

BUK95/9608-55ATrenchMOS logic level FETRev. 03 6 May 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9508-55A in SOT78 (TO-220AB)BUK9608-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 compliant 1

8.5. Size:987K philips
buk9505-30a.pdf

BUK9505-30AN-channel TrenchMOS logic level FETRev. 3 20 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

8.6. Size:50K philips
buk9505-30a 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9505-30A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology which features very low ID Drain current (DC) 75 Aon-state resistance.

8.7. Size:332K philips
buk9506-55a.pdf

BUK9506-55A; BUK9606-55A;BUK9E06-55ATrenchMOS logic level FETRev. 03 23 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);BUK9E06-55A in SOT226 (I2-PAK).

8.8. Size:333K philips
buk9506-75b buk9606-75b.pdf

BUK95/9606-75BTrenchMOS logic level FETRev. 02 30 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9506-75B in SOT78 (TO-220AB)BUK9606-75B in SOT404 (D2-PAK).1.2 Features Very low on-state r

8.9. Size:48K philips
buk9506-30 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

8.10. Size:66K philips
buk9506 buk9606-55a 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

8.11. Size:78K philips
buk9508 buk9608-55a 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: