BUK9509-55A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9509-55A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 211 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 108 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 149 nS
Cossⓘ - Output Capacitance: 570 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220AB
BUK9509-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9509-55A Datasheet (PDF)
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buk9508-55 2.pdf
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buk9507-30b buk9607-30b.pdf
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BUK95/9608-55ATrenchMOS logic level FETRev. 03 6 May 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9508-55A in SOT78 (TO-220AB)BUK9608-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 compliant 1
buk9505-30a.pdf
BUK9505-30AN-channel TrenchMOS logic level FETRev. 3 20 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9505-30a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9505-30A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology which features very low ID Drain current (DC) 75 Aon-state resistance.
buk9506-55a.pdf
BUK9506-55A; BUK9606-55A;BUK9E06-55ATrenchMOS logic level FETRev. 03 23 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);BUK9E06-55A in SOT226 (I2-PAK).
buk9506-75b buk9606-75b.pdf
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buk9506 buk9606-55a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo
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Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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