All MOSFET. BUK9509-55A Datasheet

 

BUK9509-55A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9509-55A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 211 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 108 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 149 nS

Drain-Source Capacitance (Cd): 570 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO-220AB

BUK9509-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9509-55A Datasheet (PDF)

0.1. buk9509-55a buk9509-55a buk9609-55a.pdf Size:313K _philips

BUK9509-55A
BUK9509-55A

BUK95/9609-55ATrenchMOS logic level FETRev. 01 21 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-55A in SOT78 (TO-220AB)BUK9609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia

7.1. buk9509 buk9609 75a-02.pdf Size:326K _philips

BUK9509-55A
BUK9509-55A

BUK9509-75A; BUK9609-75ATrenchMOS logic level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-75A in SOT78 (TO-220AB)BUK9609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techn

 8.1. buk9504-40a buk9604-40a buk9e04-40a.pdf Size:358K _philips

BUK9509-55A
BUK9509-55A

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr

8.2. buk9505-30a.pdf Size:987K _philips

BUK9509-55A
BUK9509-55A

BUK9505-30AN-channel TrenchMOS logic level FETRev. 3 20 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.3. buk9508-55a buk9508-55a buk9608-55a.pdf Size:328K _philips

BUK9509-55A
BUK9509-55A

BUK95/9608-55ATrenchMOS logic level FETRev. 03 6 May 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9508-55A in SOT78 (TO-220AB)BUK9608-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 compliant 1

8.4. buk9506-75b buk9606-75b.pdf Size:333K _philips

BUK9509-55A
BUK9509-55A

BUK95/9606-75BTrenchMOS logic level FETRev. 02 30 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9506-75B in SOT78 (TO-220AB)BUK9606-75B in SOT404 (D2-PAK).1.2 Features Very low on-state r

 8.5. buk9508 buk9608-55a 2.pdf Size:78K _philips

BUK9509-55A
BUK9509-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

8.6. buk9506 buk9606-55a 2.pdf Size:66K _philips

BUK9509-55A
BUK9509-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

8.7. buk9507-30b buk9607-30b.pdf Size:300K _philips

BUK9509-55A
BUK9509-55A

BUK95/9607-30BTrenchMOS logic level FETRev. 01 25 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9507-30B in SOT78 (TO-220AB)BUK9607-30B in SOT404 (D2-PAK).1.2 Features Low on-state resi

8.8. buk9508-55 2.pdf Size:52K _philips

BUK9509-55A
BUK9509-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

8.9. buk9506-30 1.pdf Size:48K _philips

BUK9509-55A
BUK9509-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

8.10. buk9505-30a 2.pdf Size:50K _philips

BUK9509-55A
BUK9509-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9505-30A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology which features very low ID Drain current (DC) 75 Aon-state resistance.

8.11. buk9506-55a.pdf Size:332K _philips

BUK9509-55A
BUK9509-55A

BUK9506-55A; BUK9606-55A;BUK9E06-55ATrenchMOS logic level FETRev. 03 23 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);BUK9E06-55A in SOT226 (I2-PAK).

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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