BUK9509-55A Datasheet and Replacement
Type Designator: BUK9509-55A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 211 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 108 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 60 nC
tr ⓘ - Rise Time: 149 nS
Cossⓘ - Output Capacitance: 570 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220AB
BUK9509-55A substitution
BUK9509-55A Datasheet (PDF)
buk9509-55a buk9509-55a buk9609-55a.pdf

BUK95/9609-55ATrenchMOS logic level FETRev. 01 21 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-55A in SOT78 (TO-220AB)BUK9609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia
buk9509 buk9609 75a-02.pdf

BUK9509-75A; BUK9609-75ATrenchMOS logic level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-75A in SOT78 (TO-220AB)BUK9609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techn
buk9508-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist
buk9504-40a buk9604-40a buk9e04-40a.pdf

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr
Datasheet: BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E , BUK7Y98-80E , BUK7Y9R9-80E , BUK9506-55A , BUK9508-55A , IRF830 , BUK9515-60E , BUK9516 , BUK951R6-30E , BUK9528-55A , BUK952R3-40E , BUK952R8-60E , BUK953R2-40E , BUK953R5-60E .
History: 2SK2513 | 2N6789 | BUK9MHH-65PNN | 2SK2520-01MR | 2N6914B
Keywords - BUK9509-55A MOSFET datasheet
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History: 2SK2513 | 2N6789 | BUK9MHH-65PNN | 2SK2520-01MR | 2N6914B



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