NDB7050 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDB7050
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de NDB7050 MOSFET
NDB7050 datasheet
ndp7060 ndb7060.pdf
May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 75A, 60V. RDS(ON) = 0.013 @ VGS=10V. transistors are produced using Fairchild's proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process is tempe
ndb708ae ndb708b ndb708be ndp708ae ndp708b ndp708be.pdf
May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell dens
ndp7060 ndb7060.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... NDB6050 , NDB6050L , NDB6051 , NDB6051L , NDB6060 , NDB6060L , NDB608A , NDB610A , IRFZ44N , NDB7050L , NDB7051 , NDB7051L , NDB7052 , NDB7052L , NDB7060 , NDB7060L , NDB7061 .
History: NDP5060 | NDP4060
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: APP540 | APP50N06 | APG250N01Q | APG095N01K | APG095N01 | APG082N01 | APG080N12 | APG078N07K | APG078N07 | APG070N12G | APG045N85 | APG042N01D | APG038N01G | APG035N04Q | APG032N04G | APG028N10
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