NDB7050 - описание и поиск аналогов

May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 75A, 60V. RDS(ON) = 0.013 @ VGS=10V. transistors are produced using Fairchild's proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process is tempe

May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell dens

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur