BUK9620-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9620-100A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 63 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 143 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de BUK9620-100A MOSFET
- Selecciónⓘ de transistores por parámetros
BUK9620-100A datasheet
buk9520-100a buk9620-100a buk9620-100a.pdf
BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t
buk9620-100b.pdf
BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features
buk9620-100b.pdf
BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features
buk9620-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 52 A the device fea
Otros transistores... BUK9611-80E , BUK9614-60E , BUK96150-55A , BUK9615-100E , BUK961R4-30E , BUK961R5-30E , BUK961R6-40E , BUK961R7-40E , 20N60 , BUK962R1-40E , BUK962R5-60E , BUK962R6-40E , BUK962R8-60E , BUK9637-100E , BUK963R1-40E , BUK963R3-60E , BUK964R1-40E .
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