BUK9620-100A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9620-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 63 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 143 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: D2PAK
BUK9620-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9620-100A Datasheet (PDF)
buk9520-100a buk9620-100a buk9620-100a.pdf
BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
buk9620-100b.pdf
BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9620-100b.pdf
BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9620-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 52 Athe device fea
buk9620-55a.pdf
BUK9620-55AN-channel TrenchMOS logic level FETRev. 02 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STP13NM60ND | NCE60NF260 | LSC65R650HT
