BUK9620-100A Specs and Replacement
Type Designator: BUK9620-100A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 63 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 143 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: D2PAK
BUK9620-100A substitution
- MOSFET ⓘ Cross-Reference Search
BUK9620-100A datasheet
buk9520-100a buk9620-100a buk9620-100a.pdf
BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t... See More ⇒
buk9620-100b.pdf
BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒
buk9620-100b.pdf
BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒
buk9620-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 52 A the device fea... See More ⇒
Detailed specifications: BUK9611-80E, BUK9614-60E, BUK96150-55A, BUK9615-100E, BUK961R4-30E, BUK961R5-30E, BUK961R6-40E, BUK961R7-40E, 20N60, BUK962R1-40E, BUK962R5-60E, BUK962R6-40E, BUK962R8-60E, BUK9637-100E, BUK963R1-40E, BUK963R3-60E, BUK964R1-40E
Keywords - BUK9620-100A MOSFET specs
BUK9620-100A cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BUK962R5-60E | BUK9637-100E
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