BUK9637-100E Todos los transistores

 ..1. Size:210K  nxp
 buk9637-100e.pdf

BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive a

 8.1. Size:57K  philips
 buk9635-100a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting. Using trench technology ID Drain current (DC) 40 A the device

 8.2. Size:56K  philips
 buk9635-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 34 A the device fea

 8.3. Size:325K  philips
 buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A

 8.4. Size:71K  philips
 buk9535-55a buk9635-55a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technolo

 8.5. Size:337K  philips
 buk9535-100a buk9635-100a.pdf

BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9535-100A in SOT78 (TO-220AB) BUK9635-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t

 8.6. Size:208K  nxp
 buk963r3-60e.pdf

BUK963R3-60E N-channel TrenchMOS logic level FET 20 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava

 8.7. Size:210K  nxp
 buk963r1-40e.pdf

BUK963R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava

 8.8. Size:834K  nxp
 buk9635-55a.pdf

BUK9635-55A N-channel TrenchMOS logic level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.9. Size:729K  nxp
 buk963r2-40b.pdf

BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compli

 8.10. Size:1185K  cn vbsemi
 buk9635-55a.pdf

BUK9635-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS