BUK9637-100E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9637-100E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 31
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 22.8
nC
trⓘ - Rise Time: 44.1
nS
Cossⓘ -
Output Capacitance: 137
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037
Ohm
Package:
D2PAK
BUK9637-100E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9637-100E
Datasheet (PDF)
..1. Size:210K nxp
buk9637-100e.pdf
BUK9637-100EN-channel TrenchMOS logic level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive a
8.1. Size:57K philips
buk9635-100a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9635-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting. Using trench technology ID Drain current (DC) 40 Athe device
8.2. Size:56K philips
buk9635-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 34 Athe device fea
8.3. Size:325K philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf
BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A
8.4. Size:71K philips
buk9535-55a buk9635-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo
8.5. Size:337K philips
buk9535-100a buk9635-100a.pdf
BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
8.6. Size:208K nxp
buk963r3-60e.pdf
BUK963R3-60EN-channel TrenchMOS logic level FET20 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava
8.7. Size:210K nxp
buk963r1-40e.pdf
BUK963R1-40EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava
8.8. Size:834K nxp
buk9635-55a.pdf
BUK9635-55AN-channel TrenchMOS logic level FETRev. 2 21 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
8.9. Size:729K nxp
buk963r2-40b.pdf
BUK963R2-40BN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compli
8.10. Size:1185K cn vbsemi
buk9635-55a.pdf
BUK9635-55Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS
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