BUK963R1-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK963R1-40E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 234 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 875 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Paquete / Cubierta: D2PAK
- Selección de transistores por parámetros
BUK963R1-40E Datasheet (PDF)
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buk963r2-40b.pdf

BUK963R2-40BN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compli
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: RRR040P03FRA | AOB418 | APT50M65LLLG | NTD6416AN | FQA90N10V2 | WVM13N50 | IRFW644A
History: RRR040P03FRA | AOB418 | APT50M65LLLG | NTD6416AN | FQA90N10V2 | WVM13N50 | IRFW644A



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