All MOSFET. BUK963R1-40E Datasheet

 

BUK963R1-40E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK963R1-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 234 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 69.5 nC
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 875 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: D2PAK

 BUK963R1-40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK963R1-40E Datasheet (PDF)

 ..1. Size:210K  nxp
 buk963r1-40e.pdf

BUK963R1-40E BUK963R1-40E

BUK963R1-40EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.1. Size:325K  philips
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BUK963R1-40E BUK963R1-40E

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

 7.2. Size:208K  nxp
 buk963r3-60e.pdf

BUK963R1-40E BUK963R1-40E

BUK963R3-60EN-channel TrenchMOS logic level FET20 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.3. Size:729K  nxp
 buk963r2-40b.pdf

BUK963R1-40E BUK963R1-40E

BUK963R2-40BN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compli

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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