BUK963R3-60E Todos los transistores

 

BUK963R3-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK963R3-60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 293 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 822 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: D2PAK

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BUK963R3-60E datasheet

 ..1. Size:208K  nxp
buk963r3-60e.pdf pdf_icon

BUK963R3-60E

BUK963R3-60E N-channel TrenchMOS logic level FET 20 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.1. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK963R3-60E

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A

 7.2. Size:210K  nxp
buk963r1-40e.pdf pdf_icon

BUK963R3-60E

BUK963R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.3. Size:729K  nxp
buk963r2-40b.pdf pdf_icon

BUK963R3-60E

BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compli

Otros transistores... BUK961R7-40E , BUK9620-100A , BUK962R1-40E , BUK962R5-60E , BUK962R6-40E , BUK962R8-60E , BUK9637-100E , BUK963R1-40E , IRF1404 , BUK964R1-40E , BUK964R2-60E , BUK964R2-80E , BUK964R7-80E , BUK964R8-60E , BUK965R4-40E , BUK965R8-100E , BUK966R5-60E .

 

 

 

 

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