BUK963R3-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK963R3-60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 293 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 822 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: D2PAK
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BUK963R3-60E Datasheet (PDF)
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buk963r2-40b.pdf

BUK963R2-40BN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compli
Otros transistores... BUK961R7-40E , BUK9620-100A , BUK962R1-40E , BUK962R5-60E , BUK962R6-40E , BUK962R8-60E , BUK9637-100E , BUK963R1-40E , IRF1404 , BUK964R1-40E , BUK964R2-60E , BUK964R2-80E , BUK964R7-80E , BUK964R8-60E , BUK965R4-40E , BUK965R8-100E , BUK966R5-60E .
History: IRF7799L2TRPBF | FQI9N15TU | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | RJK0358DSP
History: IRF7799L2TRPBF | FQI9N15TU | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | RJK0358DSP



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