BUK963R3-60E. Аналоги и основные параметры
Наименование производителя: BUK963R3-60E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 293 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 822 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK963R3-60E
- подборⓘ MOSFET транзистора по параметрам
BUK963R3-60E даташит
buk963r3-60e.pdf
BUK963R3-60E N-channel TrenchMOS logic level FET 20 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf
BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A
buk963r1-40e.pdf
BUK963R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava
buk963r2-40b.pdf
BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compli
Другие MOSFET... BUK961R7-40E , BUK9620-100A , BUK962R1-40E , BUK962R5-60E , BUK962R6-40E , BUK962R8-60E , BUK9637-100E , BUK963R1-40E , IRF1404 , BUK964R1-40E , BUK964R2-60E , BUK964R2-80E , BUK964R7-80E , BUK964R8-60E , BUK965R4-40E , BUK965R8-100E , BUK966R5-60E .
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Список транзисторов
Обновления
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