BUK964R2-60E Todos los transistores

 

BUK964R2-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK964R2-60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 263 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
   Carga de la puerta (Qg): 72 nC
   Tiempo de subida (tr): 97 nS
   Conductancia de drenaje-sustrato (Cd): 703 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0039 Ohm
   Paquete / Cubierta: D2PAK

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BUK964R2-60E Datasheet (PDF)

 ..1. Size:207K  nxp
buk964r2-60e.pdf

BUK964R2-60E BUK964R2-60E

BUK964R2-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 5.1. Size:989K  nxp
buk964r2-55b.pdf

BUK964R2-60E BUK964R2-60E

BUK964R2-55BN-channel TrenchMOS logic level FETRev. 03 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 5.2. Size:263K  nxp
buk964r2-80e.pdf

BUK964R2-60E BUK964R2-60E

BUK964R2-80EN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Sui

 7.1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf

BUK964R2-60E BUK964R2-60E

BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application

 7.2. Size:253K  nxp
buk964r7-80e.pdf

BUK964R2-60E BUK964R2-60E

BUK964R7-80EN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Sui

 7.3. Size:208K  nxp
buk964r1-40e.pdf

BUK964R2-60E BUK964R2-60E

BUK964R1-40EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.4. Size:207K  nxp
buk964r8-60e.pdf

BUK964R2-60E BUK964R2-60E

BUK964R8-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.5. Size:917K  nxp
buk964r4-40b.pdf

BUK964R2-60E BUK964R2-60E

BUK964R4-40BN-channel TrenchMOS logic level FETRev. 03 8 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feat

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