All MOSFET. BUK964R2-60E Datasheet

 

BUK964R2-60E Datasheet and Replacement


   Type Designator: BUK964R2-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 97 nS
   Cossⓘ - Output Capacitance: 703 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: D2PAK
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BUK964R2-60E Datasheet (PDF)

 ..1. Size:207K  nxp
buk964r2-60e.pdf pdf_icon

BUK964R2-60E

BUK964R2-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 5.1. Size:989K  nxp
buk964r2-55b.pdf pdf_icon

BUK964R2-60E

BUK964R2-55BN-channel TrenchMOS logic level FETRev. 03 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 5.2. Size:263K  nxp
buk964r2-80e.pdf pdf_icon

BUK964R2-60E

BUK964R2-80EN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Sui

 7.1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf pdf_icon

BUK964R2-60E

BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BUK9508-55B | BUK9514-55A | 3N325 | AP99LT06GI-HF | APG095N01G | 3LP01M | 3N190

Keywords - BUK964R2-60E MOSFET datasheet

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