BUK964R2-80E Todos los transistores

 

BUK964R2-80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK964R2-80E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 349 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 109 nS
   Cossⓘ - Capacitancia de salida: 850 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

BUK964R2-80E Datasheet (PDF)

 ..1. Size:263K  nxp
buk964r2-80e.pdf pdf_icon

BUK964R2-80E

BUK964R2-80EN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Sui

 5.1. Size:989K  nxp
buk964r2-55b.pdf pdf_icon

BUK964R2-80E

BUK964R2-55BN-channel TrenchMOS logic level FETRev. 03 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 5.2. Size:207K  nxp
buk964r2-60e.pdf pdf_icon

BUK964R2-80E

BUK964R2-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf pdf_icon

BUK964R2-80E

BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application

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