Справочник MOSFET. BUK964R2-80E

 

BUK964R2-80E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK964R2-80E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 349 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 123 nC
   trⓘ - Время нарастания: 109 ns
   Cossⓘ - Выходная емкость: 850 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для BUK964R2-80E

 

 

BUK964R2-80E Datasheet (PDF)

 ..1. Size:263K  nxp
buk964r2-80e.pdf

BUK964R2-80E
BUK964R2-80E

BUK964R2-80EN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Sui

 5.1. Size:989K  nxp
buk964r2-55b.pdf

BUK964R2-80E
BUK964R2-80E

BUK964R2-55BN-channel TrenchMOS logic level FETRev. 03 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 5.2. Size:207K  nxp
buk964r2-60e.pdf

BUK964R2-80E
BUK964R2-80E

BUK964R2-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf

BUK964R2-80E
BUK964R2-80E

BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application

 7.2. Size:253K  nxp
buk964r7-80e.pdf

BUK964R2-80E
BUK964R2-80E

BUK964R7-80EN-channel TrenchMOS logic level FET13 March 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Sui

 7.3. Size:208K  nxp
buk964r1-40e.pdf

BUK964R2-80E
BUK964R2-80E

BUK964R1-40EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.4. Size:207K  nxp
buk964r8-60e.pdf

BUK964R2-80E
BUK964R2-80E

BUK964R8-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.5. Size:917K  nxp
buk964r4-40b.pdf

BUK964R2-80E
BUK964R2-80E

BUK964R4-40BN-channel TrenchMOS logic level FETRev. 03 8 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feat

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